DEPTH PROFILING OF DEFECTS IN EPILAYER SEMICONDUCTOR-MATERIALS BY USING SYNCHROTRON X-RADIATION TOPOGRAPHY

被引：3

作者：

KUO, CL ^{[1
]}

BILELLO, JC ^{[1
]}

机构：

[1] CALIF STATE UNIV FULLERTON,SCH ENGN & COMP SCI,FULLERTON,CA 92634

来源：

关键词：

D O I：

10.1063/1.339824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：137 / 144

页数：8

共 8 条

[1]

GREEN GK, 1977, BNL50522 REP, P90

[2]

GREEN GK, 1977, BNL50595 REP, V2

[3] 2 NEW SIC POLYTYPES BELONGING TO THE [(44)N43]3 STRUCTURE FAMILY [J].

KUO, CL ;

ZHOU, J ;

YE, HQ ;

KUO, KH .

[4]

LONSDALE K, 1968, INT TABLES XRAY CRYS, V3, P175

[5]

PARRISH W, 1978, UNPUB 11TH INT C CRY, pS331

PETROFF, JF ;

SAUVAGE, M .

[7]

SAUVAGE M, 1980, SYNCHROTRON RAD RES, P620

[8] USE OF SYNCHROTRON RADIATION IN X-RAY-DIFFRACTION TOPOGRAPHY [J].

TUOMI, T ;

NAUKKARINEN, K ;

RABE, P .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 25 (01) :93-106