CONTROL OF PLASMA ETCH PROFILES WITH PLASMA SHEATH ELECTRIC-FIELD AND RF POWER-DENSITY

被引：27

作者：

ZAROWIN, CB ^{[1
]}

HORWATH, RS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1149/1.2123602

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2541 / 2547

页数：7

共 22 条

[1] ABE H, 1975, JPN J APPL PHYS, V14
[2] EDGE PROFILES IN THE PLASMA-ETCHING OF POLYCRYSTALLINE SILICON
ADAMS, AC
CAPIO, CD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) : 366 - 370
[3] BONDUR JA, 1980, ELECTROCHEMICAL SOC, P288
[4] BRUCE RA, COMMUNICATION
[5] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING
COBURN, JW
WINTERS, HF
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196
[6] GELATT CD, 1980, J ELECTROCHEM SOC, V127, pC233
[7] GOLANT VE, 1979, FUNDAMENTALS PLASMA, P63
[8] GOLANT VE, 1979, FUNDAMENTALS PLASMA, P109
[9] GOLANT VE, 1979, FUNDAMENTALS PLASMA, P150
[10] HORIIKE Y, 1979, 1ST P S DRY PROC TOK