QUANTUM TRANSPORT THEORY OF N-TYPE SEMICONDUCTORS (GAAS)

被引：29

作者：

MOORE, EJ

EHRENREICH, H

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(66)90257-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：407 / +

页数：1

共 13 条

[1] ON PREPARATION OF HIGH PURITY GALLIUM ARSENIDE [J].

AINSLIE, NG ;

WOODS, JF ;

BLUM, SE .

BLACK, J ;

LUBLIN, P .

[3] SCATTERING OF CARRIERS BY IONIZED IMPURITIES IN SEMICONDUCTORS [J].

BLATT, FJ .

[4]

BLUM SE, PRIVATE COMMUNICATIO

[5]

BROOKS H, 1955, ADV ELECTRON, V7, P128

[6]

FRONSDAL C, 1961, LECTURE NOTES MAN ED

[7]

Jauch J., 1955, THEORY PHOTONS ELECT

[8] QUANTUM THEORY OF ELECTRICAL TRANSPORT PHENOMENA [J].

KOHN, W ;

LUTTINGER, JM .

PHYSICAL REVIEW, 1957, 108 (03) :590-611

[9]

Reid F. J., 1958, J ELECT CONTROL, V5, P54

[10]

RICKAYZEN G, 1961, LECTURE NOTES MANY B