INTERMODULATION DISTORTION IN A MULTIPLE-QUANTUM-WELL SEMICONDUCTOR OPTICAL AMPLIFIER

被引：14

作者：

CHUNG, YC ^{[1
]}

WIESENFELD, JM ^{[1
]}

RAYBON, G ^{[1
]}

KOREN, U ^{[1
]}

TWU, Y ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 02期

关键词：

D O I：

10.1109/68.76864

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the measurement of intermodulation distortion (IMD) induced by carrier-density modulation in a multiple-quantum-well semiconductor amplifier. The results show that multiple-quantum-well amplifiers have 15 dB less IMD than conventional buried heterostructure semiconductor amplifiers. Also, the frequency response of the IMD shows a dependence arising from two distinct carrier lifetimes, 200-250 ps and < 10 ps.

引用

页码：130 / 132

页数：3

共 14 条

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