A NEW METHOD OF ANALYSIS OF DLTS-SPECTRA

被引:26
作者
LANGFELD, R
机构
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1987年 / 44卷 / 02期
关键词
D O I
10.1007/BF00626409
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:107 / 110
页数:4
相关论文
共 8 条
[1]   A DEEP LEVEL TRANSIENT SPECTROSCOPY ANALYSIS OF ELECTRON AND HOLE TRAPS IN BULK-GROWN GAAS [J].
AURET, FD ;
LEITCH, AWR ;
VERMAAK, JS .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :158-163
[2]  
Bourgoin J., 1983, SPRINGER SER SOLID S, V35
[3]  
DZEWIOR J, 1982, WISS BER AEG TELEFUN, V55, P25
[4]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[5]  
LANG DV, 1979, TOPICS APPL PHYS
[6]   METHOD OF ANALYSIS OF A SINGLE-PEAK DLTS SPECTRUM WITH 2 OVERLAPPING DEEP-TRAP RESPONSES [J].
NAKASHIMA, H ;
MIYAGAWA, T ;
SUGITANI, S ;
HASHIMOTO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (02) :205-208
[7]  
THURZO I, 1986, PHYS STAT SOLIDI A, V89, P693
[8]  
VASILEV AV, 1983, SOV PHYS SEMICOND+, V17, P103