NOISE CHARACTERISTICS OF A SI/SIGE RESONANT TUNNELING DIODE

被引：2

作者：

OKADA, Y ^{[1
]}

XU, J ^{[1
]}

LIU, HC ^{[1
]}

LANDHEER, D ^{[1
]}

BUCHANAN, M ^{[1
]}

HOUGHTON, DC ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,MICROSTRUCTURAL SCI LAB,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 09期

关键词：

D O I：

10.1016/0038-1101(89)90014-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：797 / 800

页数：4

相关论文

共 6 条

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS
CHANG, LL
ESAKI, L
TSU, R
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595
[2] RESONANT TUNNELING IN SI/SI1-XGEX DOUBLE-BARRIER STRUCTURES
LIU, HC
LANDHEER, D
BUCHANAN, M
HOUGHTON, DC
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (21) : 1809 - 1811
[3] OBSERVATION OF RESONANT TUNNELING THROUGH A COMPOSITIONALLY GRADED PARABOLIC QUANTUM-WELL
SEN, S
CAPASSO, F
GOSSARD, AC
SPAH, RA
HUTCHINSON, AL
CHU, SNG
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (18) : 1428 - 1430
[4] RESONANT TUNNELING OSCILLATIONS IN A GAAS-ALXGA1-XAS HETEROSTRUCTURE AT ROOM-TEMPERATURE
SHEWCHUK, TJ
CHAPIN, PC
COLEMAN, PD
KOPP, W
FISCHER, R
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (05) : 508 - 510
[5] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ
SOLLNER, TCLG
GOODHUE, WD
TANNENWALD, PE
PARKER, CD
PECK, DD
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 588 - 590
[6] VANDERZIEL A, 1986, NOISE SOLID STATE DE, pCH8