NOISE CHARACTERISTICS OF A SI/SIGE RESONANT TUNNELING DIODE

被引:2
作者
OKADA, Y [1 ]
XU, J [1 ]
LIU, HC [1 ]
LANDHEER, D [1 ]
BUCHANAN, M [1 ]
HOUGHTON, DC [1 ]
机构
[1] NATL RES COUNCIL CANADA,MICROSTRUCTURAL SCI LAB,OTTAWA K1A 0R6,ONTARIO,CANADA
关键词
D O I
10.1016/0038-1101(89)90014-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:797 / 800
页数:4
相关论文
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