SURFACE MODIFICATION IN PLASMA-ASSISTED ETCHING OF SILICON

[1] BARISH EL, J APPL PHYS

[2] SURFACE STUDIES OF AND A MASS BALANCE MODEL FOR AR+ ION-ASSISTED CL-2 ETCHING OF SI [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 37 - 42

[3] BEHRISCH R, 1983, TOPICS APPLIED PHYSI, V47, P52

[4] INFLUENCE OF SPUTTERING, RANGE SHORTENING AND STRESS-INDUCED OUT-DIFFUSION ON RETENTION OF XENON IMPLANTED IN SILICON [J]. NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F): : 387 - 392

[5] BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338

[6] CAUGHAN DV, 1974, P IEEE, V62, P1236

[7] Chu WK., 1978, BACKSCATTERING SPECT

[8] DIELEMAN J, 1984, SOLID STATE TECHNOL, V27, P191

[9] RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4015 - 4021

[10] DONNELLY VM, 1981, SOLID STATE TECHNOL, V24, P161

[1] BARISH EL, J APPL PHYS

[2] SURFACE STUDIES OF AND A MASS BALANCE MODEL FOR AR+ ION-ASSISTED CL-2 ETCHING OF SI [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 37 - 42

[3] BEHRISCH R, 1983, TOPICS APPLIED PHYSI, V47, P52

[4] INFLUENCE OF SPUTTERING, RANGE SHORTENING AND STRESS-INDUCED OUT-DIFFUSION ON RETENTION OF XENON IMPLANTED IN SILICON [J]. NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F): : 387 - 392

[5] BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338

[6] CAUGHAN DV, 1974, P IEEE, V62, P1236

[7] Chu WK., 1978, BACKSCATTERING SPECT

[8] DIELEMAN J, 1984, SOLID STATE TECHNOL, V27, P191

[9] RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4015 - 4021

[10] DONNELLY VM, 1981, SOLID STATE TECHNOL, V24, P161