SIMULATION APPROACH FOR MODELING SINGLE EVENT UPSETS ON ADVANCED CMOS SRAMS

被引：16

作者：

JOHNSON, RL

DIEHLNAGLE, SE

HAUSER, JR

机构：

来源：

关键词：

D O I：

10.1109/TNS.1985.4334079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4122 / 4127

页数：6

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