ION TRACK SHUNT EFFECTS IN MULTIJUNCTION STRUCTURES

被引：55

作者：

HAUSER, JR ^{[1
]}

DIEHLNAGLE, SE ^{[1
]}

KNUDSON, AR ^{[1
]}

CAMPBELL, AB ^{[1
]}

STAPOR, WJ ^{[1
]}

SHAPIRO, P ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/TNS.1985.4334078

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4115 / 4121

页数：7

共 10 条

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[3]

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[6] CHARGE COLLECTION IN MULTILAYER STRUCTURES [J].

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1149-1154

[7] USE OF AN ION MICROBEAM TO STUDY SINGLE EVENT UPSETS IN MICROCIRCUITS [J].

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4017-4021

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4140-4144

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2024-2031

[10] CHARGE COLLECTION MEASUREMENTS FOR HEAVY-IONS INCIDENT ON N-TYPE AND P-TYPE SILICON [J].

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