INPLANE ANISOTROPY STUDIES IN AMORPHOUS COFENB FILMS

被引：3

作者：

CONTRERAS, MC

RIVAS, S

IGLESIAS, I

CORRALES, JA

KRISHNAN, R

TESSIER, M

机构：

[1] UNIV OVIEDO,ESCUELA TECN SUPER INGN IND & INGN INFORMAT,GIJON,SPAIN

[2] CNRS,MAGNETISME & MAT MAGNET LAB,F-92195 MEUDON,FRANCE

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1993年 / 29卷 / 06期

关键词：

D O I：

10.1109/20.281331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Uniaxial anisotropy field, H-k, and local anisotropy fluctuation were studied as a function of argon pressure during deposition for the RF sputtered amorphous CoFeNb films. Influence of P(Ar)on H-k, K-loc and S (structure constant) is discussed. The magnitude of S and K-loc V-1/2 were found to be strongly dependent on P-Ar.

引用

收藏

页码：3885 / 3887

页数：3

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