ON THE PERFORMANCE OF NON-COOLED (IN, AS)SB PHOTOELECTROMAGNETIC DETECTORS FOR 10.6 M-RADIATION

被引：4

作者：

JOZWIKOWSKI, K

ORMAN, Z

ROGALSKI, A

机构：

[1] Inst of Technical Physics, Warsaw, Pol, Inst of Technical Physics, Warsaw, Pol

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 91卷 / 02期

关键词：

PHOTOELECTROMAGNETIC EFFECTS - Mathematical Models - SEMICONDUCTING INTERMETALLICS;

D O I：

10.1002/pssa.2210910247

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using a generalized theory of the photoelectromagnetic (PEM) effect, the parameters of noncooled InAs//0//. //3//5Sb//0//. //6//5 PEM far-infrared detectors are analysed. The responsivity and detectivity are estimated in dependence of detector geometry and of recombination velocities at the surface. The highest values are obtained for p-type material.

引用

页码：745 / 751

页数：7

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