OXYGEN CONTROL OF DC-SPUTTERED BI2SR2CA1CU2O8+DELTA FILMS

被引：19

作者：

AUGE, J

RUDIGER, U

FRANK, H

ROSKOS, HG

GUNTHERODT, G

KURZ, H

机构：

[1] Institut für Halbleitertechnik II, Rheinisch-Westfälische Technische Hochschule, Aachen, 52056 Aachen

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.111153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the preparation of T(c)-optimized Bi2Sr2Ca1Cu2O8+delta thin films on SrTiO3 substrates using a planar dc-sputtering method. The oxygen content of these films is adjusted in situ by controlling the oxygen flow during sputtering. The oxygen content can be varied continuously from the overdoped state (T(c)=72 K) to the condition with optimum oxygen content (T(c)=88 K), and further, to the underdoped state (T(c)=76 K). The oxygen content is determined by x-ray measurements of the c-axis lattice parameter.

引用

页码：378 / 380

页数：3

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