THERMAL-RESISTANCE MEASUREMENTS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：31

作者：

ADLERSTEIN, MG

ZAITLIN, MP

机构：

[1] Raytheon Research Division, Lexington, MA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 06期

关键词：

Semiconducting Aluminum Compounds - Semiconducting Gallium Arsenide - Thermal Conductivity - Measurements;

D O I：

10.1109/16.81653

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method for the measurement of thermal resistance of heterojunction bipolar transistors has been developed. In this brief, the measurement technique is described and its application is illustrated. Results for single-emitter finger HBT's are explained with the help of a model for HBT thermal resistance.

引用

页码：1553 / 1554

页数：2