PEAK TEMPERATURE IN HIGH-POWER CHIPS

被引：24

作者：

HAJISHEIKH, A

机构：

[1] Department of Mechanical Engineering, The University of Texas at Arlington, Arlington, TX

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/16.52423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Graphs are presented to facilitate calculation of steady-state peak temperature at transistor sites on chips. The effect of temperaturedependent thermal conductivity is included through application of the Kirchhoff transformation. The condition of uniform temperature on the bottom surface, which is in contact with the solder layer, when cooling is by convection, is studied. This assists the linear-ization of working formulas for temperature-dependent thermal conductivity of materials such as Si, InP, and GaAs in the presence of convective cooling, as well as prescribed bottom surface temperature. © 1990 IEEE

引用

页码：902 / 907

页数：6

共 6 条

[1] GREEN-FUNCTION PARTITIONING PROCEDURE APPLIED TO FOIL HEAT-FLUX GAUGES [J].