THERMAL DESIGN STUDIES OF HIGH-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：118

作者：

GAO, GB

WANG, MZ

GUI, X

MORKOC, H

机构：

[1] BEIJING POLYTECH UNIV,DEPT RADIO & ELECTR,BEIJING 100022,PEOPLES R CHINA

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 05期

关键词：

D O I：

10.1109/16.299666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：854 / 863

页数：10

相关论文

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