ANALYSIS OF CARRIER-BLOCKING EFFECT IN ALGAAS/GAAS HBTS WITH INSULATING EXTERNAL COLLECTOR AND DESIGN CRITERIA FOR COLLECTOR-UP HBTS

被引:4
作者
HORIO, K
NAKATANI, A
机构
[1] Faculty of Systems Engineering, Shibaura Institute of Technology
关键词
D O I
10.1109/16.469394
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Two-dimensional simulations of cutoff frequencies for AlGaAs/GaAs HBT's with perfectly insulating external collector are made, and the results are compared with those for a case with semi-insulating external collector and for a case with normal n(-) external collector, Its found that in the case with perfectly insulating external collector, minority carriers injected into the base from the emitter are partially blocked by the insulating layer and accumulate in the external base region, These carriers increase the effective base delay time, resulting in remarkable degradation of the cutoff frequency, In relation to this effect, a collector-up HBT is also simulated, and the design criteria for it are discussed, It is concluded that the effective emitter width should be made narrower than the collector width.
引用
收藏
页码:1897 / 1902
页数:6
相关论文
共 17 条
[1]   GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS [J].
ASBECK, PM ;
MILLER, DL ;
ANDERSON, RJ ;
EISEN, FH .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :310-312
[2]   GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - ISSUES AND PROSPECTS FOR APPLICATION [J].
ASBECK, PM ;
CHANG, MCF ;
HIGGINS, JA ;
SHENG, NH ;
SULLIVAN, GJ ;
WANG, KC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) :2032-2042
[3]   HIGH-PERFORMANCE EMITTER-UP DOWN SIGE HBTS [J].
BURGHARTZ, JN ;
JENKINS, KA ;
GRUTZMACHER, DA ;
SEDGWICK, TO ;
STANIS, CL .
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (09) :360-362
[4]   NUMERICAL-SIMULATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH VARIOUS COLLECTOR PARAMETERS [J].
HORIO, K ;
IWATSU, Y ;
YANAI, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (04) :617-624
[5]   NUMERICAL-SIMULATION OF GAAS-MESFETS ON THE SEMI-INSULATING SUBSTRATE COMPENSATED BY DEEP TRAPS [J].
HORIO, K ;
YANAI, H ;
IKOMA, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (11) :1778-1785
[6]   COMPUTER-AIDED ANALYSIS OF GAAS N-I-N STRUCTURES WITH A HEAVILY COMPENSATED I-LAYER [J].
HORIO, K ;
IKOMA, T ;
YANAI, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) :1242-1250
[7]   2-DIMENSIONAL ANALYSIS OF HIGH INJECTION EFFECTS IN ALGAAS/GAAS HBTS WITH SEMIINSULATING EXTERNAL COLLECTORS [J].
HORIO, K ;
OGUCHI, A ;
YANAI, H .
SOLID-STATE ELECTRONICS, 1991, 34 (12) :1393-1400
[8]  
HORIO K, 1993, P SISDEP 93, P449
[9]  
HORIO K, 1990, 1990 P IEEE BIP CIRC, P195
[10]   ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH SMALL SIZE FABRICATED BY A MULTIPLE SELF-ALIGNMENT PROCESS USING ONE MASK [J].
INADA, M ;
OTA, Y ;
NAKAGAWA, A ;
YANAGIHARA, M ;
HIROSE, T ;
EDA, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2405-2411