ELECTROLYTIC ETCHING OF BORON PHOSPHIDE

被引：4

作者：

CHU, TL ^{[1
]}

GILL, M ^{[1
]}

CHU, SS ^{[1
]}

机构：

[1] SO METHODIST UNIV,INST TECHNOL,DALLAS,TX 75275

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 02期

关键词：

D O I：

10.1149/1.2132799

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：259 / 262

页数：4

共 13 条

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[2]

CHU TC, TO BE PUBLISHED

[3] CRYSTAL-GROWTH OF BORON MONOPHOSPHIDE FROM METAL PHOSPHIDE SOLUTIONS [J].

CHU, TL ;

JACKSON, JM ;

SMELTZER, RK .

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[4] CRYSTALS AND EPITAXIAL LAYERS OF BORON PHOSPHIDE [J].

CHU, TL ;

JACKSON, JM ;

HYSLOP, AE ;

CHU, SC .

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[5]

CHU TM, IN PRESS

[6] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J].

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LAVINE, MC .

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[7]

GERISCHER H, 1970, PHYSICAL CHEMISTRY A, V9, P523

[8]

KRUMME JP, 1967, T METALL SOC AIME, V239, P395

[9] ANODIC DISSOLUTION AND SELECTIVE ETCHING OF GALLIUM-PHOSPHIDE [J].

MEEK, RL ;

SCHUMAKER, NE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (09) :1148-+

[10]

MORRIS HB, 1973, THESIS SO METHODIST

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