ELECTRON SUBBAND STRUCTURE IN SELECTIVELY DOPED N-ALXGA1-XAS/GAAS HETEROSTRUCTURES

被引：25

作者：

SCHUBERT, EF

PLOOG, K

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 09期

关键词：

D O I：

10.1109/T-ED.1985.22210

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1868 / 1873

页数：6

共 23 条

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