GASB SINGLE-CRYSTAL GROWTH IN (111) DIRECTION

被引:7
作者
KATSUI, A
UEMURA, C
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 07期
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D O I
10.1143/JJAP.21.1106
中图分类号
O59 [应用物理学];
学科分类号
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页码:1106 / 1106
页数:1
相关论文
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[2]   INDIUM ANTIMONIDE - A REVIEW OF ITS PREPARATION, PROPERTIES AND DEVICE APPLICATIONS [J].
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[3]   LEC GROWTH OF GASB SINGLE-CRYSTALS USING BORIC OXIDE [J].
KATSUI, A ;
UEMURA, C .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) :L318-L320
[4]  
STEINEMANN A, 1963, SOLID STATE ELECTRON, V3, P597