SINGLE-CARRIER INJECTION IN SILICON AT 76 DEGREES + 300 DEGREES K

被引：6

作者：

GREGORY, BL

JORDAN, AG

机构：

来源：

关键词：

D O I：

10.1063/1.1713157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3046 / &

相关论文

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[4] SPACE-CHARGE LIMITED EMISSION IN SEMICONDUCTORS [J].

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