REFLECTANCE ANISOTROPY OF RECONSTRUCTED GAAS(001) SURFACES

被引：27

作者：

MORRIS, SJ ^{[1
]}

BASS, JM ^{[1
]}

MATTHAI, CC ^{[1
]}

MILMAN, V ^{[1
]}

PAYNE, MC ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 04期

关键词：

D O I：

10.1116/1.587231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have performed ab initio pseudopotential calculations of three alternative structures of the GaAs(001) surface to examine the dependence of the reflectance anisotropy spectrum (RAS) upon the precise surface configuration. Spectra were calculated based upon a hypothetical (2 X 1) surface, a (2 X 4)-beta surface using experimentally measured atom positions, and a (2 X 4)-beta surface using atom positions given by total-energy minimization. It was found that the RA spectra depended significantly upon the atom positions, and in particular, that proper surface relaxation, including the Ga layer below the surface, was necessary in order to account for the low-energy (2.5 eV) feature in the experimentally observed spectrum.

引用

页码：2684 / 2688

页数：5

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