MODEL FOR OPTICAL BISTABILITY IN GAAS/ALGAAS FABRY-PEROT ETALONS INCLUDING DIFFRACTION, CARRIER DIFFUSION, AND HEAT-CONDUCTION

A new model for optical bistability in layered semiconductor Fabry-Perot éalons is presented. The model accounts for diffraction, carrier diffusion, and thermal conduction. Assuming that the spot size and the thickness of the nonlinear layer are smaller than the diffusion length of the carriers, a simplified model is derived that has been used to design bistable AlGaAs éalons with improved thermal properties. © 1990, Optical Society of America.