ANTIMONY AND ARSENIC SEGREGATION AT SI-SIO2 INTERFACES

被引：59

作者：

SAIHALASZ, GA

SHORT, KT

WILLIAMS, JS

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 06期

关键词：

D O I：

10.1109/EDL.1985.26127

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：285 / 287

页数：3

共 7 条

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[3]

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[6] SEGREGATION OF ARSENIC TO THE GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON [J].

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[7]

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