1.5-MU-M INGAAS/INALGAAS QUANTUM-WELL MICRODISK LASERS

被引：35

作者：

CHU, DY ^{[1
]}

CHIN, MK ^{[1
]}

SAUER, NJ ^{[1
]}

XU, Z ^{[1
]}

CHANG, TY ^{[1
]}

HO, ST ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.262538

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microdisk lasers with three InGaAs/InAlGaAs quantum wells were demonstrated for the first time. The selective etching method to fabricate the InGaAs/InAlGaAs microdisk laser structure is discussed. The lasers with 20 mu m in diameter lase with single mode at 1.5-mu m wavelength when optically Pumped with pulsed Argon-ion laser at 80 K.

引用

页码：1353 / 1355

页数：3

共 8 条

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