CW OPERATION OF SEMICONDUCTOR RING LASERS

被引：96

作者：

KRAUSS, T ^{[1
]}

LAYBOURN, PJR ^{[1
]}

ROBERTS, J ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 25期

关键词：

Lasers; Semiconductor lasers;

D O I：

10.1049/el:19901349

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semiconductor ring lasers have been fabricated in single quantum well material using electron-beam lithography and Sic14 dry etching. CW operation has been achieved in 84μm diameter rings at a threshold current of 24 mA. This low value makes the structure very suitable for monolithic integration in optoelectronic circuits. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：2095 / 2097

页数：3

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