RECTANGULAR AND L-SHAPED GAAS/ALGAAS LASERS WITH VERY HIGH-QUALITY ETCHED FACETS

被引：23

作者：

BEHFARRAD, A ^{[1
]}

WONG, SS ^{[1
]}

BALLANTYNE, JM ^{[1
]}

SOLTZ, BA ^{[1
]}

HARDING, CM ^{[1
]}

机构：

[1] MCDONNELL DOUGLAS ASTRONAUT CO,CTR OPTOELECTR,ELMSFORD,NY 10523

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.100960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：493 / 495

页数：3

共 13 条

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[2]

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[6]

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[7] CAVITY LENGTH DEPENDENCE OF THE THRESHOLD BEHAVIOR IN THIN QUANTUM-WELL SEMICONDUCTOR-LASERS [J].

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[8] HIGH-EFFICIENCY SUPERLATTICE GRADED-INDEX SEPARATE CONFINING HETEROSTRUCTURE LASERS WITH ALGAAS SINGLE QUANTUM WELLS [J].

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APPLIED PHYSICS LETTERS, 1988, 52 (18) :1455-1457

[9] HIGH-POWER ALGAAS/GAAS SINGLE QUANTUM-WELL LASERS WITH CHEMICALLY ASSISTED ION-BEAM ETCHED MIRRORS [J].

TIHANYI, P ;

WAGNER, DK ;

ROZA, AJ ;

VOLLMER, HJ ;

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WOLF, ED .

APPLIED PHYSICS LETTERS, 1987, 50 (23) :1640-1641

[10] NONSELECTIVE ETCHING OF GAAS ALGAAS DOUBLE HETEROSTRUCTURE LASER FACETS BY CL-2 REACTIVE ION ETCHING IN A LOAD-LOCKED SYSTEM [J].

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HU, EL .

APPLIED PHYSICS LETTERS, 1987, 51 (10) :719-721

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