NONSELECTIVE ETCHING OF GAAS ALGAAS DOUBLE HETEROSTRUCTURE LASER FACETS BY CL-2 REACTIVE ION ETCHING IN A LOAD-LOCKED SYSTEM

被引：42

作者：

VAWTER, GA

COLDREN, LA

MERZ, JL

HU, EL

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 10期

关键词：

D O I：

10.1063/1.98899

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：719 / 721

页数：3

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[1] GAAS AND ALGAAS ANISOTROPIC FINE PATTERN ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM
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[8] DOUBLE HETEROSTRUCTURE LASERS WITH FACETS FORMED BY A HYBRID WET AND REACTIVE-ION-ETCHING TECHNIQUE
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2948 - 2950
[9] GAAS AND GAALAS REACTIVE ION ETCHING IN BCL3-CL2 MIXTURE
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09): : L731 - L733