GAAS AND GAALAS REACTIVE ION ETCHING IN BCL3-CL2 MIXTURE

[1] GAAS AND GAALAS EQUI-RATE ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L653 - L655

[2] ALUMINUM REACTIVE ION ETCHING EMPLOYING CCL4+CL2 MIXTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (10): : 1412 - 1420

[3] NAGASAKA H, 1982, P S DRY PROCESS, P79

[4] POULSEN RG, 1976, 1976 P INF EL DEV M, P205

[5] PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTOR-MATERIALS AND THEIR OXIDES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01): : 12 - 16

[6] COMPARISON OF ALUMINUM ETCH RATES IN CARBON-TETRACHLORIDE AND BORON-TRICHLORIDE PLASMAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (04) : 851 - 855

[7] YAMADA H, 1983, P S DRY PROCESSES, P73

[1] GAAS AND GAALAS EQUI-RATE ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L653 - L655

[2] ALUMINUM REACTIVE ION ETCHING EMPLOYING CCL4+CL2 MIXTURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (10): : 1412 - 1420

[3] NAGASAKA H, 1982, P S DRY PROCESS, P79

[4] POULSEN RG, 1976, 1976 P INF EL DEV M, P205

[5] PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTOR-MATERIALS AND THEIR OXIDES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01): : 12 - 16

[6] COMPARISON OF ALUMINUM ETCH RATES IN CARBON-TETRACHLORIDE AND BORON-TRICHLORIDE PLASMAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (04) : 851 - 855

[7] YAMADA H, 1983, P S DRY PROCESSES, P73