COMPARISON OF ALUMINUM ETCH RATES IN CARBON-TETRACHLORIDE AND BORON-TRICHLORIDE PLASMAS

被引：77

作者：

TOKUNAGA, K

REDEKER, FC

DANNER, DA

HESS, DW

机构：

来源：

关键词：

D O I：

10.1149/1.2127518

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：851 / 855

页数：5

共 25 条

[1] BERSIN RL, 1978, SOLID STATE TECH APR, P117
[2] HEAT OF FORMATION AN+ ENTROPY OF (BOC1)3
BLAUER, J
FARBER, M
[J]. JOURNAL OF CHEMICAL PHYSICS, 1963, 39 (01) : 158 - &
[3] ION-SURFACE INTERACTIONS IN PLASMA ETCHING
COBURN, JW
WINTERS, HF
CHUANG, TJ
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540
[4] END-POINT DETERMINATION OF ALUMINUM CCL4 PLASMA ETCHING BY OPTICAL EMISSION-SPECTROSCOPY
CURTIS, BJ
BRUNNER, HJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) : 829 - 830
[5] DONNELLY VM, 1980, EXTENDED ABSTRACTS E, P323
[6] FOK TY, 1980, EL SOC EXT ABST 0511, P301
[7] HIGH-RATE REACTIVE ION ETCHING OF AL2O3 AND SI
HEIMAN, N
MINKIEWICZ, V
CHAPMAN, B
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03): : 731 - 734
[8] HERNDON TO, 1977, 77 INT KOD MICR S MO
[9] NATURAL AND THERMALLY FORMED OXIDE FILMS ON ALUMINUM
HUNTER, MS
FOWLE, P
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1956, 103 (09) : 482 - 485
[10] LECLAIRE R, 1979, SOLID STATE TECH APR, P139