ONE-STEP 2-LEVEL ETCHING TECHNIQUE FOR MONOLITHIC INTEGRATED-OPTICS

被引：15

作者：

GRANDE, WJ

BRADDOCK, WD

SHEALY, JR

TANG, CL

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 26期

关键词：

D O I：

10.1063/1.98935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2189 / 2191

页数：3

相关论文

共 16 条

[1] ALGAAS LASERS WITH MICRO-CLEAVED MIRRORS SUITABLE FOR MONOLITHIC INTEGRATION
BLAUVELT, H
BARCHAIM, N
FEKETE, D
MARGALIT, S
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 289 - 290
[2] GAAS SINGLE-MODE RIB WAVE-GUIDES WITH REACTIVE ION-ETCHED TOTALLY REFLECTING CORNER MIRRORS
BUCHMANN, P
KAUFMANN, H
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (04) : 785 - 788
[3] CHEMICALLY ASSISTED ION-BEAM ETCHING OF GAAS, TI, AND MO
CHINN, JD
FERNANDEZ, A
ADESIDA, I
WOLF, ED
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 701 - 704
[4] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET
COLDREN, LA
IGA, K
MILLER, BI
RENTSCHLER, JA
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 681 - 683
[5] DOBKIN AS, 1970, SOV PHYS SEMICOND+, V4, P515
[6] A NOVEL ANISOTROPIC DRY ETCHING TECHNIQUE
GEIS, MW
LINCOLN, GA
EFREMOW, N
PIACENTINI, WJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1390 - 1393
[7] SEMICONDUCTOR-LASER LOGIC GATE SUITABLE FOR MONOLITHIC INTEGRATION
GRANDE, WJ
TANG, CL
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (22) : 1780 - 1782
[8] HIGH-QUANTUM-EFFICIENCY LOW-THRESHOLD MICROCLEAVED ALXGA1-XAS LASERS
LEVINE, BF
VANDERZIEL, JP
LOGAN, RA
BETHEA, CG
[J]. ELECTRONICS LETTERS, 1982, 18 (16) : 690 - 691
[9] MCGILLIS DA, 1983, VLSI TECHNOLOGY, pCH7
[10] OPTIMIZING THE PERFORMANCE OF ALGAAS GRADED INDEX SEPARATE CONFINING HETEROSTRUCTURE QUANTUM-WELL LASERS
SHEALY, JR
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (23) : 1634 - 1636