SINGLE EVENT UPSET AND CHARGE COLLECTION MEASUREMENTS USING HIGH-ENERGY PROTONS AND NEUTRONS

被引：43

作者：

NORMAND, E ^{[1
]}

OBERG, DL ^{[1
]}

WERT, JL ^{[1
]}

NESS, JD ^{[1
]}

MAJEWSKI, PP ^{[1
]}

WENDER, S ^{[1
]}

GAVRON, A ^{[1
]}

机构：

[1] LOS ALAMOS NATL LAB,LOS ALAMOS,NM 87545

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期

关键词：

D O I：

10.1109/23.340563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

RAMs, microcontrollers and surface barrier detectors were exposed to beams of high energy protons and neutrons to measure the induced number of upsets as well as energy deposition. The WNR facility at Los Alamos provided a neutron spectrum similar to that of the atmospheric neutrons. Its effect on devices was compared to that of protons with energies of 200, 400, 500 and 800 MeV. Measurements indicate that SEU cross sections for 400 MeV protons are similar to those induced by the atmospheric neutron spectrum.

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页码：2203 / 2209

页数：7

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