SOFT FAILS IN MICROELECTRONIC CIRCUITS DUE TO PROTON-INDUCED NUCLEAR-REACTIONS IN MATERIAL SURROUNDING THE SEU-SENSITIVE VOLUME

被引：7

作者：

ELTELEATY, S

MCNULTY, PJ

ABDELKADER, WG

BEAUVAIS, WJ

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 40-1卷

关键词：

D O I：

10.1016/0168-583X(89)90644-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：1300 / 1305

页数：6

共 8 条

[1] CHARGE-DEPOSITION SPECTRA IN THIN SLABS OF SILICON INDUCED BY ENERGETIC PROTONS [J].

ELTELEATY, S ;

FARRELL, GE ;

MCNULTY, PJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4394-4397

[2] MICRODOSIMETRIC ANALYSIS OF PROTON-INDUCED REACTIONS IN SILICON AND GALLIUM-ARSENIDE [J].

FARRELL, GE ;

MCNULTY, PJ ;

ABDELKADER, W .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1073-1077

[3] MICRODOSIMETRIC ASPECTS OF PROTON-INDUCED NUCLEAR-REACTIONS IN THIN-LAYERS OF SILICON [J].

FARRELL, GE ;

MCNULTY, PJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2012-2016

[4] ALPHA-PARTICLE-INDUCED FIELD AND ENHANCED COLLECTION OF CARRIERS [J].

HU, C .

ELECTRON DEVICE LETTERS, 1982, 3 (02) :31-34

[5]

KIRKPATRICK S, 1979, IEEE T ELECTRON DEV, V26, P11

[6]

MCLEAN FB, 1982, IEEE T NUCL SCI, V29, P2018

[7] METHODS FOR CALCULATING SEU RATES FOR BIPOLAR AND NMOS CIRCUITS [J].

MCNULTY, PJ ;

ABDELKADER, WG ;

BISGROVE, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4180-4184

[8]

SAIHALASZ GA, 1980, IEEE ELECTRON DEVICE, V1, P10

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