METHODS FOR CALCULATING SEU RATES FOR BIPOLAR AND NMOS CIRCUITS

被引：13

作者：

MCNULTY, PJ

ABDELKADER, WG

BISGROVE, JM

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/TNS.1985.4334090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4180 / 4184

页数：5

共 14 条

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[3]

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[4] MICRODOSIMETRIC ANALYSIS OF PROTON-INDUCED REACTIONS IN SILICON AND GALLIUM-ARSENIDE [J].

FARRELL, GE ;

MCNULTY, PJ ;

ABDELKADER, W .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1073-1077

[5] MICRODOSIMETRIC ASPECTS OF PROTON-INDUCED NUCLEAR-REACTIONS IN THIN-LAYERS OF SILICON [J].

FARRELL, GE ;

MCNULTY, PJ .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2012-2016

[6] SINGLE EVENT UPSET OF DYNAMIC RAMS BY NEUTRONS AND PROTONS [J].

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ALLAS, RG .

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[7] PROTON-INDUCED NUCLEAR-REACTIONS IN SILICON [J].

MCNULTY, PJ ;

FARRELL, GE ;

TUCKER, WP .

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[8]

MCNULTY PJ, 1981, JAN P AIR FORC GEOPH

[9]

MCNULTY PJ, 1980, SPACE SYSTEMS THEIR

[10]

NICHOLS DG, UNPUB

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