APPLICATION OF TRAVELING SOLVENT METHOD TO GROWING OF PB1-XSNXTE SINGLE-CRYSTALS

被引:4
作者
BANSARAGTSCHIN, B [1 ]
LEHMANN, G [1 ]
LINK, R [1 ]
机构
[1] HUMBOLDT UNIV,BEREICH EXPTL HALBLEITER PHYS,SEKT PHYS,DDR-104 BERLIN,GER DEM REP
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 37卷 / 01期
关键词
D O I
10.1002/pssa.2210370146
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:K13 / K15
页数:3
相关论文
共 8 条
[1]  
CALAWA AR, 1968, T METALL SOC AIME, V242, P374
[2]  
GOSCHEL U, 1975, THESIS HUMBOLDT U
[3]  
Harman T. C., 1973, J NONMETALS, V1, P183
[4]   LOW-CARRIER-CONCENTRATION LIQUID EPITAXIAL PB 1-X SNX TE [J].
LONGO, JT ;
GERTNER, ER ;
JOSEPH, AS .
APPLIED PHYSICS LETTERS, 1971, 19 (06) :202-&
[5]  
LOZOVSKII VN, 1972, ZONNAYA PLAVKA GRADI
[6]  
Melngailis I., 1970, SEMICOND SEMIMETALS, V5, P111, DOI [10.1016/S0080-8784(08)62815-X, DOI 10.1016/S0080-8784(08)62815-X]
[7]   GROWTH OF LARGE CRYSTALS OF (PB,GE)TE AND (PB,SN)TE [J].
PARKER, SG ;
PINNELL, JE ;
JOHNSON, RE .
JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) :731-746
[8]  
PFANN WG, 1957, ZONE MELTING