PARASITIC SOURCE AND DRAIN RESISTANCE IN HIGH-ELECTRON-MOBILITY TRANSISTORS

被引：26

作者：

LEE, SJ ^{[1
]}

CROWELL, CR ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI & ELECT ENGN,LOS ANGELES,CA 90007

来源：

关键词：

D O I：

10.1016/0038-1101(85)90016-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：659 / 668

页数：10

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