STUDY OF SURFACE ACOUSTIC-WAVES ON THE (110) PLANE OF GALLIUM-ARSENIDE

被引:12
作者
BRIGHT, VM [1 ]
KIM, Y [1 ]
HUNT, WD [1 ]
机构
[1] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
关键词
D O I
10.1063/1.350412
中图分类号
O59 [应用物理学];
学科分类号
摘要
Piezoelectric semiconductors such as GaAs are of interest for signal processing devices due to the possibility of monolithic integration of surface-acoustic-wave (SAW) -based devices and active electronic circuits on the same substrate. The common crystal orientation of GaAs for these applications has been the {100} cut. In this paper the characteristics of surface wave propagation in the {110} plane of GaAs, which supports both the Rayleigh and the Bleustein-Gulyaev surface wave modes, are investigated. Several test devices have been fabricated and studied using laser probe and S-parameter measurement techniques. The SAW velocity, attenuation, piezoelectric coupling constant, slowness surface, beam profile, and the transducer characteristics have been measured, and the experimental results agree well with the theoretical calculations for both types of the surface wave modes.
引用
收藏
页码:597 / 605
页数:9
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