ELECTRON-TRANSPORT IN INVERSION AND ACCUMULATION LAYERS OF III-V-COMPOUNDS

被引：8

作者：

GOODNICK, SM

FERRY, DK

机构：

来源：

THIN SOLID FILMS | 1983年 / 103卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(83)90422-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：27 / 46

页数：20

共 108 条

[1] ENERGY AND LIFETIME OF SPACE-CHARGE-INDUCED LOCALIZED STATES [J].

ALFERIEFF, ME ;

DUKE, CB .

PHYSICAL REVIEW, 1968, 168 (03) :832-+

[2] ELECTRON-ELECTRON INTERACTION AND ELECTRONIC PROPERTIES OF SPACE-CHARGE LAYERS ON SEMICONDUCTOR SURFACES [J].

ANDO, T .

SURFACE SCIENCE, 1978, 73 (01) :1-18

[3] SCREENING EFFECT AND QUANTUM TRANSPORT IN A SILICON INVERSION LAYER IN STRONG MAGNETIC-FIELDS [J].

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (05) :1616-1626

[4] INVERSION LAYER TRANSPORT AND PROPERTIES OF OXIDES ON INAS [J].

BAGLEE, DA ;

FERRY, DK ;

WILMSEN, CW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1032-1036

[5]

BAGLEE DA, 1981, I PHYS C SER, V56, P259

[6] EFFECT OF ELECTRIC AND MAGNETIC-FIELD ON SELF-CONSISTENT POTENTIAL AT SURFACE OF A DEGENERATE SEMICONDUCTOR [J].

BARAFF, GA ;

APPELBAUM, JA .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :475-+

[7] IONISED IMPURITY SCATTERING IN SILICON SURFACE CHANNELS [J].

BERZ, F .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :903-&

[8]

CHAPLIK AV, 1969, SOV PHYS JETP-USSR, V28, P514

[9] ELECTRON SUBBANDS ON INP [J].

CHENG, HC ;

KOCH, F .

PHYSICAL REVIEW B, 1982, 26 (04) :1989-1998

[10] EFFECT OF CHARGE INHOMOGENEITIES ON SILICON SURFACE MOBILITY [J].

CHENG, YC .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) :2425-2427

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