IMPROVEMENTS IN DOSE UNIFORMITY ON HIGH-CURRENT ION-IMPLANTATION SYSTEMS

被引：3

作者：

EDDY, R

LONG, A

SMITH, S

TKACH, J

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 21卷 / 2-4期

关键词：

D O I：

10.1016/0168-583X(87)90870-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：424 / 427

页数：4

相关论文

共 5 条

[1]

EHRLICH E, 1985, NUCL INSTR METH B, V6, P228

[2] PERFORMANCE-CHARACTERISTICS OF THE EXTRION 160-10 ION-IMPLANTATION SYSTEM [J].

LIEBERT, R ;

PEDERSEN, B ;

EHRLICH, C ;

CALLAHAN, W .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) :16-26

[3] XP SERIES HIGH-CURRENT ION-IMPLANTATION SYSTEMS FOR UP TO 200 MM WAFER PROCESSING [J].

THAYER, RB .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :245-250

[4]

THORBURN BA, 1985, SPIE C ADV APPLICATI

[5] INTELLIGENT PERFORMANCE OPTIMIZATION FOR A FULLY-AUTOMATIC HIGH-CURRENT ION-IMPLANTATION SYSTEM [J].

WONSON, C ;

THOMPSON, T .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :523-525