THERMODYNAMIC THEORY OF HOT-ELECTRON TRANSPORT IN SILICON

被引：7

作者：

OHNO, Y

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1986年 / 55卷 / 02期

关键词：

D O I：

10.1143/JPSJ.55.590

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：590 / 598

页数：9

共 15 条

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[4]

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[7]

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[8]

HEIKES RR, 1961, THERMOELECTRICITY SC, pCH2

[9] PHYSICS OF EXCESS ELECTRON VELOCITY IN SUB-MICRONCHANNEL FETS [J].

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