INGAASP/INP MULTIPLE QUANTUM-WELLS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：9

作者：

HOU, HQ

TU, CW

机构：

[1] Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期

关键词：

Molecular Beam Epitaxy - Photoluminescence - Semiconducting Indium Phosphide;

D O I：

10.1016/0022-0248(92)90384-U

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have grown In1-xGaxAsyP1-y/InP multiple quantum well structures with 1.3-mu-m excitonic absorption at room temperature by gas-source molecular beam epitaxy. In-situ composition determination in GaAs1-xPx and InAsxP1-x was carried out by measuring group-V-induced intensity oscillations of reflection high-energy electron diffraction. Based on the in-situ composition calibration for these ternary end members, Ga and As compositions in the quaternary compound, In1-xGaxAsyP1-y, were controlled successfully. Measurements by X-ray rocking curve, low-temperature photoluminescence and absorption spectroscopy indicate that high-quality In1-xGaxAsyP1-y/InP multiple quantum well samples were obtained.

引用

页码：167 / 171

页数：5

共 18 条

[1]

Casey H.C., 1978, HETEROSTRUCTURE LASE

[2] HIGH-RESOLUTION X-RAY-DIFFRACTION OF INALAS/INP SUPERLATTICES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].