STUDIES ON THIN-FILMS OF ZNSE ON GAAS PREPARED BY A CHEMICAL-DEPOSITION METHOD

被引：8

作者：

CHAUDHARI, GN ^{[1
]}

MANORAMA, S ^{[1
]}

RAO, VJ ^{[1
]}

机构：

[1] INDIAN INST CHEM TECHNOL,DIV INORGAN & PHYS CHEM,MAT SCI GRP,HYDERABAD 500007,INDIA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1992年 / 25卷 / 05期

关键词：

D O I：

10.1088/0022-3727/25/5/018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of zinc selenide have been deposited for the first time by a simple technique known as the liquid-gas interface reaction technique. Deposited films were studied using x-ray diffraction, transmission electron microscopy and optical absorption. The films deposited at a higher bath temperature of 80-degrees-C are polycrystalline in nature. The optical band gap is found to be 2.62 eV. The low angle x-ray diffraction shows that three phases, namely Ga2Se3, As2Se3 and Zn3As2, are formed after annealing ZnSe films on GaAs at different temperatures.

引用

页码：862 / 864

页数：3

共 10 条

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