PHOTO-ELECTROCHEMICAL MEASUREMENTS OF H-IMPLANTED AND HE-IMPLANTED GAP

被引：4

作者：

BUTLER, MA

ARNOLD, GW

BRICE, DK

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 12期

关键词：

D O I：

10.1149/1.2123668

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2735 / 2739

页数：5

共 23 条

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[9] SUBBAND GAP RESPONSE OF TIO2 AND SRTIO3 PHOTOELECTRODES [J].

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