AN ANALYTIC MODEL FOR THE MIS TUNNEL JUNCTION

被引：60

作者：

TARR, NG ^{[1
]}

PULFREY, DL ^{[1
]}

CAMPORESE, DS ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1W5,BC,CANADA

来源：

关键词：

D O I：

10.1109/T-ED.1983.21442

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1760 / 1770

页数：11

共 34 条

[1]

Ashcroft N. W., 1976, SOLID STATE PHYS, P569

[2]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[3]

CARD HC, 1980, I PHYS C SER, V50, P140

[4]

CHARLSON EJ, 1976, DEV NEW SILICON SCHO, P30

[5]

Duke C. B., 1969, Tunneling phenomena in solids, P31

[6]

DUKE CB, 1978, SPR M EL SOC

[7] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS [J].

FONASH, SJ .

[8]

FRANZ W, 1956, HDB PHYSIK, V17, P155

[9] THEORY OF TUNNELING INTO INTERFACE STATES [J].

FREEMAN, LB ;

DAHLKE, WE .

[10]

Green M. A., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P896