THE TEMPERATURE CHARACTERISTICS OF AN H2S-SENSITIVE PD-GATE MOS-TRANSISTOR

被引：4

作者：

ZHANG, WX

ZHAO, YB

机构：

[1] Tianjin Univ, China, Tianjin Univ, China

来源：

SENSORS AND ACTUATORS | 1988年 / 15卷 / 01期

关键词：

D O I：

10.1016/0250-6874(88)85020-0

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：85 / 93

页数：9

共 11 条

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[8]

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