DEEP ELECTRON TRAPS IN AS2SE3 SINGLE-CRYSTALS STUDIED BY PHOTOCONDUCTIVITY AND TSC MEASUREMENTS

被引：8

作者：

BRUNST, G

WEISER, G

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1985年 / 52卷 / 04期

关键词：

D O I：

10.1080/13642818508238930

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：843 / 856

页数：14

共 22 条

[1] ELECTROABSORPTION ON THE INDIRECT GAP OF AS2SE3 [J].

ALTHAUS, HL ;

WEISER, G .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 99 (01) :277-284

[2] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].

ANDERSON, PW .

PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955

[3] PHOTODECOMPOSITION OF AMORPHOUS AS2SE3 AND AS2S3 [J].

BERKES, JS ;

ING, SW ;

HILLEGAS, WJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :4908-&

[4] OPTICALLY INDUCED LOCALIZED PARAMAGNETIC STATES IN CHALCOGENIDE GLASSES [J].

BISHOP, SG ;

STROM, U ;

TAYLOR, PC .

PHYSICAL REVIEW LETTERS, 1975, 34 (21) :1346-1350

[5]

BRUNST G, 1984, PHIL MAG B, V51, P67

[6] PHOTOCONDUCTIVITY AND CRYSTAL IMPERFECTIONS IN CADMIUM SULFIDE CRYSTALS .2. DETERMINATION OF CHARACTERISTIC PHOTOCONDUCTIVITY QUANTITIES [J].

BUBE, RH .

JOURNAL OF CHEMICAL PHYSICS, 1955, 23 (01) :18-25

[7]

BURLICH GJA, 1948, P PHYS SOC A, V60, P574

[8] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].

KASTNER, M ;

ADLER, D ;

FRITZSCHE, H .

PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507

[9]

KASTNER M, 1978, 14TH P INT C PHYS SE, P1301

[10]

KOLOMIET.BT, 1966, FIZ TVERD TELA+, V7, P2181

← 1 2 3 →