TEMPORAL CHANGES IN REFLECTIVITY OF CRYSTALLINE SILICON IN PICOSECOND LASER-INDUCED MELTING

被引:2
作者
KANEMITSU, Y [1 ]
KURODA, H [1 ]
SHIONOYA, S [1 ]
机构
[1] NATL LAB HIGH ENERGY PHYS,OHO,IBARAKI 305,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 07期
关键词
D O I
10.1143/JJAP.23.940
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:940 / 940
页数:1
相关论文
共 2 条
[1]   PICOSECOND DYNAMICS OF PULSED LASER ANNEALING OF ION-IMPLANTED SILICON [J].
KANEMITSU, Y ;
KURODA, H ;
SHIONOYA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (05) :618-621
[2]   COMPUTER MODELING OF THE TEMPERATURE RISE AND CARRIER CONCENTRATION INDUCED IN SILICON BY NANOSECOND LASER-PULSES [J].
LIETOILA, A ;
GIBBONS, JF .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3207-3213