PICOSECOND DYNAMICS OF PULSED LASER ANNEALING OF ION-IMPLANTED SILICON

被引：13

作者：

KANEMITSU, Y

KURODA, H

SHIONOYA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 05期

关键词：

D O I：

10.1143/JJAP.23.618

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：618 / 621

页数：4

共 15 条

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[2] PICOSECOND DYNAMICS OF PULSED LASER ANNEALING OF ION-IMPLANTED SILICON [J].

KANEMITSU, Y ;

KURODA, H ;

SHIONOYA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (05) :618-621

[3]

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[7] PHASE-TRANSFORMATION ON AND CHARGED-PARTICLE EMISSION FROM A SILICON CRYSTAL-SURFACE, INDUCED BY PICOSECOND LASER-PULSES [J].

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APPLIED PHYSICS LETTERS, 1981, 39 (09) :755-757

[8] PICOSECOND TIME-RESOLVED PLASMA AND TEMPERATURE-INDUCED CHANGES OF REFLECTIVITY AND TRANSMISSION IN SILICON [J].

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[10] TIME-RESOLVED REFLECTIVITY MEASUREMENTS OF FEMTOSECOND-OPTICAL-PULSE INDUCED PHASE-TRANSITIONS IN SILICON [J].

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PHYSICAL REVIEW LETTERS, 1983, 50 (06) :454-457

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