RESONANT RAMAN-SCATTERING IN [111] GAAS/ALAS SHORT-PERIOD SUPERLATTICES

被引:8
作者
CALLE, F [1 ]
MOWBRAY, DJ [1 ]
NILES, DW [1 ]
CARDONA, M [1 ]
CALLEJA, JM [1 ]
PLOOG, K [1 ]
机构
[1] UNIV AUTONOMA MADRID,DEPT FIS APLICADA,E-28049 MADRID,SPAIN
来源
PHYSICAL REVIEW B | 1991年 / 43卷 / 11期
关键词
D O I
10.1103/PhysRevB.43.9152
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Resonant Raman scattering has been used to study short-period GaAs/AlAs superlattices grown along the [111] direction. Samples with moderately large periods (wells and barriers greater than 9 monolayers) show a direct band gap, while for a (6,6) monolayer sample the lowest-energy transition appears to be indirect in k space (but direct in real space), occurring between the GaAs GAMMA and L states. Confined optical phonons are clearly observed in resonant conditions, both for GaAs and AlAs; they yield information about the bulk optical-phonon dispersions of these materials along the GAMMA-L direction.
引用
收藏
页码:9152 / 9157
页数:6
相关论文
共 39 条