LOW RESIDUAL REFLECTIVITY OF ANGLED-FACET SEMICONDUCTOR-LASER AMPLIFIERS

被引：21

作者：

COLLAR, AJ ^{[1
]}

HENSHALL, GD ^{[1
]}

FARRE, J ^{[1
]}

MIKKELSEN, B ^{[1
]}

WANG, Z ^{[1
]}

ESKILDSEN, L ^{[1
]}

OLESEN, DS ^{[1
]}

STUBKJAER, KE ^{[1
]}

机构：

[1] TECH UNIV DENMARK,INST ELECTROMAGNET,CTR BROADBAND TELECOMMUN,DK-2800 LYNGBY,DENMARK

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 08期

关键词：

D O I：

10.1109/68.58046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ridge-waveguide angled-facet semiconductor laser amplifiers for the 1.5 μm band have been fabricated with facet angles of 7° and 10°. Gain measurements performed with a stable, computer-controlled setup have revealed gain ripples as low as 0.025 dB at 22 dB gain for a 10° device. This corresponds to a residual reflectivity of 1·10-5. © 1990 IEEE

引用

页码：553 / 555

页数：3

共 6 条

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[2]

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[4] POLARIZATION-INDEPENDENT ANTIREFLECTION COATINGS FOR SEMICONDUCTOR OPTICAL AMPLIFIERS [J].

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[5] SINGLE-LAYER COATING FOR ANGLED FACET AMPLIFIER [J].

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MIKKELSEN, B ;

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OLESEN, DS .

ELECTRONICS LETTERS, 1989, 25 (17) :1139-1141

[6]

ZAH CE, 1988, 11TH IEEE INT SEM LA

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