ANNEALING OF SILICON IMPLANTED BY A HIGH-DOSE OF COBALT IONS INVESTIGATED BY IN-SITU X-RAY-DIFFRACTION

被引：9

作者：

MULLER, M ^{[1
]}

BAHR, D ^{[1
]}

PRESS, W ^{[1
]}

JEBASINSKI, R ^{[1
]}

MANTL, S ^{[1
]}

机构：

[1] KEA JULICH GMBH,FORSCHUNGSZENTRUM,ISI,D-52428 JULICH,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 03期

关键词：

D O I：

10.1063/1.354832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A silicon wafer was implanted by a high dose of cobalt ions. Afterwards it was annealed in situ while grazing incidence x-ray diffraction measurements in a temperature range up to 690-degrees-C were carried out. The formation of cobalt disilicide (CoSi2) precipitates starts during implantation. The annealing dependence of the precipitate growth, of strain relaxation, and of improvements of the silicide crystallinity was determined. We got an activation energy of (0.47 +/- 0.08) eV for the observed annealing process. The result is a buried cobalt disilicide layer with very rough interfaces. The film quality can be improved by a subsequent annealing at about 1000-degrees-C.

引用

页码：1590 / 1596

页数：7

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